PRODUCTS
POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
Silicon Carbide (SiC) is a wide bandgap semiconductor material featuring a wide bandgap, ultra-high breakdown electric field, excellent thermal conductivity, and strong high temperature resistance. Its key advantage lies in high efficiency energy conversion under high voltage, high temperature, and high power conditions. SiC is widely used in EV power devices, photovoltaic inverters, energy storage systems, and high temperature aerospace electronics.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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MARINE ELECTRONICS

Industrial Inverters, Servo Control Systems, Marine Power Supplies

WE PROVIDE SOLUTIONS TO MARINE ELECTRONICS AND ENERGY SYSTEMS WITH HIGH EFFICIENCY AND RELIABILITY

Wide bandgap semiconductor power devices, including SiC and GaN, can bring high power density, superior efficiency, and exceptional reliability to next generation marine electronics.
These technologies significantly enhance the performance of ship propulsion systems, deep-sea exploration equipment, marine radar, and communication stations. They can reduce heat dissipation requirement and improve long term stability in high temperature, high humidity, and corrosive marine environment, enabling more compact and lightweight system designs.
Furthermore, SiC and GaN devices play a key role in marine renewable energy applications such as offshore wind and wave energy conversion as well as in shore-based and ship-based charging infrastructure. They provide robust electronic hardware support for efficient power conversion and transmission.

DESIGN RESOURCES

POWERED BY SIC/GAN TECHNOLOGY, THINKANTECH DELIVERS COMPREHENSIVE POWER CONVERSION SOLUTIONS ACROSS ALL APPLICATIONS

FEATURED PRODUCTS
X3G6503ATL
X3G6503ATL
TOLT-packaged 650 V / 30 mΩ GaN HEMT, providing an ideal solution for high-efficiency fast chargers and server power supplies.
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XM17001KT4
XM17001KT4
1700V 5A SiC Power MOSFET
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XUS010N1X3TL3
XUS010N1X3TL3
100V / 1.3mΩ silicon MOSFET in a TOLL package, featuring ultra-low on-resistance for exceptionally high power density and efficiency
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XS060SPRB065N1
XS060SPRB065N1
The 650 V / 60 mΩ SiC MOSFET power module adopts the Easy1B package with a PIM topology, making it suitable for control systems and new-energy applications operating under harsh high-temperature and high-frequency conditions.
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XI50SPRB065N8S
XI50SPRB065N8S
The 650 V / 50 A IGBT module adopts the EconoPIM 2 package, making it suitable for medium- and high-voltage industrial control as well as new-energy applications.
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THINKANTECH SIGNIFICANTLY ENHANCES PRODUCT ENERGY EFFICIENCY WITH THE POWER OF OUR WIDE BANDGAP SEMICONDUCTORS
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